The MOSFETs are again Classified as below:ġ. metal oxide semiconductor field effect transistor There are two types of field effect transistors and they are explained below:

Used in high voltage / current & high frequency switching power applications (Inverters, SMPS).Also See: Semiconductors PPT and PDF Report Download MOSFET Seminar | PPT | PDF Report.

Used in high speed power converters like inverters & choppers.

PT normally operated as a switch in CE config.

Used in heat / light control, ac motor control circuit.

Įxample of Inverter Grade Thyristor Ratings

Ex: Converter grade (line commutated) SCR.

Line Commutated Thyristors available up to 6000V, 4500A.

Madhusudhan Rao, E&C Dept., MSRITĬomparison between different commonly used Thyristors Power Semiconductor Devices, their Symbols & Characteristics 14ĭEVICE SYMBOLS & CHARACTERISTICS 15 Prof.

GATT = Gate Assisted Turn Off Thyristor.

N-Channel MOSFET = N-Channel Metal Oxide Silicon Field Effect Transistor.

IGBT = Insulated Gate Bipolar Junction Transistor.

NPN BJT = NPN Bipolar Junction Transistor.

IGCT = Insulated Gate Controlled Thyristor.

( Switching speed lower than MOSFET) 10 Prof.

Higher current capability & higher switching speed than a BJT.

Low on state conduction power loss like BJT.

Simple gate drive, Lower switching loss.

Combines the advantages of BJT & MOSFET.

Semiconductor Cross-section of IGBT 8 Prof.

Gate pulse width critical for turn-off for larger currents.

Gate pulse width not critical for smaller device currents.

Gate controlled possible if current is less than peak controllable current.

High switching speeds achieved due to fast turn-on & turn-off.

Low on-state losses & large current capabilities.

One MOSFET for turning ON the MCT and the other to turn OFF the MCT.

Basically a thyristor with two MOSFETs built in the gate structure.

New device that has become commercially available.

Jawale Head and Associate Professor Department of Electronics Yeshwantrao Chavan Mahavidyalaya, Tuljapur B.Sc.-I Sem-I Paper-I 1

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